PMBT2222; PMBT2222a features high current (max. 600 ma) low voltage (max. 40 v). applications switching and linear amplification. description npn switching transistor in a sot23 plastic package. pnp complements: pmbt2907 and pmbt2907a. marking type number marking code (1) PMBT2222 * 1b PMBT2222a * 1p pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam255 top view 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. transistor mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter PMBT2222 - 60 v PMBT2222a - 75 v v ceo collector-emitter voltage open base PMBT2222 - 30 v PMBT2222a - 40 v v ebo emitter-base voltage open collector PMBT2222 - 5v PMBT2222a - 6v i c collector current (dc) - 600 ma i cm peak collector current - 800 ma i bm peak base current - 200 ma p tot total power dissipation t amb 25 c; note 1 - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current PMBT2222 i e = 0; v cb =50v - 10 na i e = 0; v cb =50v; t j = 125 c - 10 m a collector cut-off current PMBT2222a i e = 0; v cb =60v - 10 na i e = 0; v cb =60v; t j = 125 c - 10 m a i ebo emitter cut-off current i c = 0; v eb =5v PMBT2222a - 10 na h fe dc current gain i c = 0.1 ma; v ce =10v 35 - i c = 1 ma; v ce =10v 50 - i c = 10 ma; v ce =10v 75 - i c = 10 ma; v ce =10v; t amb = - 55 c35 - i c = 150 ma; v ce = 10 v 100 300 i c = 150 ma; v ce =1v 50 - dc current gain i c = 500 ma; v ce =10v PMBT2222 30 - PMBT2222a 40 - v cesat collector-emitter saturation voltage i c = 150 ma; i b = 15 ma; note 1 PMBT2222 - 400 mv PMBT2222a - 300 mv collector-emitter saturation voltage i c = 500 ma; i b = 50 ma; note 1 PMBT2222 - 1.6 v PMBT2222a - 1v v besat base-emitter saturation voltage i c = 150 ma; i b = 15 ma; note 1 PMBT2222 - 1.3 v PMBT2222a 0.6 1.2 v base-emitter saturation voltage i c = 500 ma; i b = 50 ma; note 1 PMBT2222 - 2.6 v PMBT2222a - 2v c c collector capacitance i e =i e = 0; v cb = 10 v; f = 1 mhz - 8pf 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com PMBT2222; PMBT2222a product specification
note 1. pulse test: t p 300 m s; d 0.02. c e emitter capacitance i c =i c = 0; v eb = 500 mv; f = 1 mhz PMBT2222 - 30 PMBT2222a - 25 f t transition frequency i c = 20 ma; v ce = 20 v; f = 100 mhz PMBT2222 250 - mhz PMBT2222a 300 - mhz f noise ?gure i c = 100 m a; v ce =5v; r s =1k w ; f = 1 khz - 4db switching times (between 10% and 90% levels); (see fig.2) t on turn-on time i con = 150 ma; i bon = 15 ma; i boff = - 15 ma - 35 ns t d delay time - 15 ns t r rise time - 20 ns t off turn-off time - 250 ns t s storage time - 200 ns t f fall time - 60 ns symbol parameter conditions min. max. unit handbook, full pagewidth r c r2 r1 dut mlb826 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc fig.2 test circuit for switching times. v i = 9.5 v; t = 500 m s; t p =10 m s; t r =t f 3 ns. r1 = 68 w ; r2 = 325 w ; r b = 325 w ; r c = 160 w . v bb = - 3.5 v; v cc = 29.5 v. oscilloscope: input impedance z i =50 w . 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com PMBT2222; PMBT2222a product specification
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